Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8793-8796

  Yakuphanoglu, F ^a   Kandaz, M ^b   Senkal, B F ^c  

^a FIRAT UNIVERSITY   (Turkey)

^b SAKARYA UNIVERSITY   (Turkey)

^c ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Interface state density; Metal organic inorganic semiconductor contacts; Organic semiconductor; Phthalocyanine

Indexed keywords

CAPACITANCE; CARBOXYLATION; COBALT; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC RECTIFIERS; METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; THIOPHENE; TRANSITION METALS;

BARRIER HEIGHT; CAPACITANCE-VOLTAGE CHARACTERISTICS; CAPACITANCE-VOLTAGE MEASUREMENTS; COBALT(II); CURRENT-VOLTAGE; ELECTRICAL CHARACTERISTICS; HEXYLTHIO; IDEALITY FACTORS; INTERFACE STATE DENSITIES; INTERFACE-STATE DENSITY; METAL-ORGANIC-INORGANIC SEMICONDUCTOR CONTACTS; ORGANIC FILMS; ORGANIC LAYERS; ORGANIC SEMICONDUCTOR; PHTHALOCYANINE; PHYSICAL BARRIERS; SERIES RESISTANCE; SI SCHOTTKY DIODE; TETRAKIS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 50849144325     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.076     Document Type: Article

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