Scaling of hafnium-based high-k dielectrics

Materials Research Society Symposium Proceedings

Volumn 996, Issue , 2007, Pages 41-51

  Triyoso, Dina H ^a   Hegde, Rama I ^a   Gregory, Rich ^a   Gilmer, David C ^a   Schaeffer, James K ^a   Samavedam, Srikanth B ^a   Kaushik, Vidya ^a   Rochat, Nevine ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CRYSTAL IMPURITIES; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; MORPHOLOGY; OPTICAL PROPERTIES; THRESHOLD VOLTAGE; TITANIUM DIOXIDE;

CAPACITANCE-EQUIVALENT THICKNESS; DIELECTRIC SCALING; HAFNIUM BASED DIELECTRICS; HIGH DIELECTRIC CONSTANTS; INTERFACE CHARACTERISTIC; INTERFACIAL LAYER; METAL CAPPING LAYERS; NITROGEN INCORPORATION;

HIGH-K DIELECTRIC;

EID: 70349901059     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0996-h03-01     Document Type: Conference Paper

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