(Ba,Sr)TiO3 capacitor technology for Gbit-scale DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 803-806

  Ono, K ^a   Horikawa, T ^a   Shibano, T ^a   Mikami, N ^a   Kuroiwa, T ^a   Kawahara, T ^a   Matsuno, S ^a   Uchikawa, F ^a   Satoh, S ^a   Abe, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; DIELECTRIC FILMS; DYNAMIC RANDOM ACCESS STORAGE; ELECTROCHEMICAL ELECTRODES; PERMITTIVITY; STRONTIUM COMPOUNDS;

BACK-END PROCESSES;

CAPACITORS;

EID: 17444445131     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)