Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Nagaoka, T ^a   Eriguchi, K ^a   Ono, K ^a   Ohta, H ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; ATOMIC PHYSICS; DYNAMICS; ETCHING; MOLECULAR DYNAMICS; REACTION KINETICS;

AB-INITIO; CLASSICAL MOLECULAR DYNAMICS; CLUSTER IONS; ETCH YIELDS; ETCHING PROCESS; HIGH-ENERGY REGIONS; INTERATOMIC POTENTIAL MODELS; LOW-ENERGY REGIONS; MASS RATIOS; MONOENERGETIC; PHYSICAL SPUTTERING; REACTION DYNAMICS; SI-H BONDS; STILLINGER-WEBER POTENTIALS; TRANSLATIONAL ENERGIES;

SILICON;

EID: 59349093527     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056391     Document Type: Article

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