Numerical study on Si etching by monatomic Br+/Cl+ beams and diatomic Br21+/Cl2 +/HBr+ beams

Japanese Journal of Applied Physics

Volumn 48, Issue 7 PART 1, 2009, Pages

  Nagaoka, Tatsuya ^a   Ohta, Hiroaki ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARY COMPOSITIONS; CLASSICAL MOLECULAR DYNAMICS; ETCH RATES; ETCHING CHARACTERISTICS; HIGH ENERGY REGIONS; NUMERICAL STUDIES;

ETCHING; MOLECULAR DYNAMICS;

SILICON;

EID: 72049128290     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.070219     Document Type: Article

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