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Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

Micro-four-point probe Hall effect measurement method

(4) Petersen, Dirch H a,b Hansen, Ole a Lin, Rong b Nielsen, Peter F b

a TECHNICAL UNIVERSITY OF DENMARK (Denmark)

b Capres AS (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CIVIL AVIATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GERMANIUM; GYRATORS; HALL EFFECT; HEALTH; MAGNETIC FIELD EFFECTS; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; MEASUREMENTS; METALS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SHEET RESISTANCE; SILICON; THICK FILMS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ANALYTICAL EXPRESSIONS; CARRIER (CO); CURRENT FLOWING; ELECTROSTATIC POTENTIAL (ESP); EXPERIMENTAL CONDITIONS; FOUR POINT; FOUR POINT PROBE (FPP); FOUR-POINT PROBE MEASUREMENTS; HALL EFFECT MEASUREMENTS; INSULATING BARRIERS; MAGNETIC (CE); METAL CONTACT PADS; MICRO SCALES; REPRODUCIBILITY; SEMICONDUCTOR THIN FILMS; SHEET CARRIER DENSITIES; ULTRA SHALLOW JUNCTION (USJ); VAN DER PAUW;

GALVANOMAGNETIC EFFECTS;

EID: 47749093158 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2949401 Document Type: Article

Times cited : (75)

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