High precision micro-scale Hall effect characterization method using in-line micro four-point probes

16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008

Volumn , Issue , 2008, Pages 251-256

  Petersen, D H ^a,b   Hansen, O ^a   Lin, R ^b   Nielsen, P F ^b   Clarysse, T ^c   Goossens, J ^c   Rosseel, E ^c   Vandervorst, W ^c,d  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b Capres AS   (Denmark)

^c IMEC   (Belgium)

^d Stad Leuven   (Belgium)

Author keywords

dose; four point probe; Hall effect; laser anneal; mobility; sheet resistance; USJ

Indexed keywords

CHARACTERIZATION METHODS; DOSE; FOUR-POINT PROBE; HALL EFFECT MEASUREMENT; LASER ANNEAL; SHEET RESISTANCE VARIATION; SPATIALLY INHOMOGENEOUS; USJ;

CARRIER MOBILITY; CHARACTERIZATION; MONTE CARLO METHODS; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SHEET RESISTANCE;

HALL EFFECT;

EID: 84879868716     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2008.4690563     Document Type: Conference Paper

References (8)

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