Advanced carrier depth profiling on Si and Ge with micro four-point probe

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 317-321

  Clarysse, Trudo ^a   Eyben, Pierre ^a   Parmentier, Brigitte ^a   Van Daele, Benny ^a   Satta, Alessandra ^a   Vandervorst, Wilfried ^a,b   Lin, Rong ^c   Petersen, Dirch Hjorth ^c,d   Nielsen, Peter Folmer ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Capres AS   (Denmark)

^d TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; SHEET RESISTANCE; SILICON COMPOUNDS;

CARRIER PROFILE; ELECTRICALLY ACTIVE DOPANT; FOUR-POINT PROBE; SPREADING RESISTANCE PROBE (SRP);

DEPTH PROFILING;

EID: 38849194193     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2802101     Document Type: Article

References (9)

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8. IMECPROF, a professional SRP analysis package, Imec, Belgium.
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