Micro-uniformity during laser anneal: metrology and physics

Materials Research Society Symposium Proceedings

Volumn 1070, Issue , 2008, Pages 41-47

  Vandervorst, W ^a,b   Rosseel, E ^a   Lin, R ^c   Petersen, D H ^c,d   Clarysse, T ^a   Goossens, J ^a   Nielsen, P F ^c   Churton, K ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Capres AS   (Denmark)

^d TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^e APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; LASER BEAMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

BEAM UNIFORMITY; DEVICE PERFORMANCE; DOPANT CONCENTRATIONS; ELECTRICAL ACTIVATION; LASER ANNEALING; NON-UNIFORMITIES; RESEARCH EFFORTS; SOURCE/DRAIN EXTENSION;

SEMICONDUCTOR LASERS;

EID: 62949203047     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1070-e01-10     Document Type: Conference Paper

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