Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1979-1980

  Alzanki, T ^a   Gwilliam, R ^a   Emerson, N ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; DIFFUSION; HALL EFFECT; HYDROFLUORIC ACID; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SILICON;

ANODIZATION; ELECTRICAL PROFILES; ENERGY IMPLANTATION; ULTRASHALLOW JUNCTIONS;

ANTIMONY;

EID: 5444219934     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1792378     Document Type: Article

References (7)

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