Depletion of surface accumulation charge in InN by anodic oxidation

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Denisenko, A ^a   Pietzka, C ^a   Chuvilin, A ^a   Kaiser, U ^a   Lu, H ^b   Schaff, W J ^b   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTROLYTES; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOS CAPACITORS; OXIDATION; POTASSIUM; POTASSIUM HYDROXIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; STRUCTURAL METALS; SURFACE TREATMENT;

ANODIC TREATMENTS; AS-GROWN; BAND-BENDING; CAPACITANCE-VOLTAGE CHARACTERISTICS; CARRIER PROFILES; ELECTROCHEMICAL METHODS; INN LAYERS; METAL CONTACTS; METAL-OXIDE SEMICONDUCTORS; MOS DIODES; NON-UNIFORM; OXIDE INTERFACES; OXIDE LAYERS; SURFACE ACCUMULATIONS; SURFACE OXIDE LAYERS; TRANSMISSION ELECTRONS;

ANODIC OXIDATION;

EID: 60449096765     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073930     Document Type: Article

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