Reduction of recombination velocity on GaAs surface by Ga-S and As-S bond-related surface states from (NH4)2Sx treatment

Journal of the Electrochemical Society

Volumn 144, Issue 6, 1997, Pages 2106-2115

  Sik, H ^a   Feurprier, Y ^b   Cardinaud, C ^b   Turban, G ^b   Scavennec, A ^a  

^a ORANGE LABS   (France)

^b UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; PHOTOLUMINESCENCE; SULFUR COMPOUNDS; SURFACE STRUCTURE; SURFACE TREATMENT;

RECOMBINATION VELOCITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031170489     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837749     Document Type: Article

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