Chemical and electronic properties of sulfur-passivated InAs surfaces

Surface Science

Volumn 523, Issue 3, 2003, Pages 231-240

  Petrovykh, D Y ^a,b   Yang, M J ^b   Whitman, L J ^b  

^a University of Maryland   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Etching; Indium arsenide; Oxidation; Sulphides; Surface electrical transport (surface conductivity, surface recombination, etc.); Surface electronic phenomena (work function, surface potential, surface states, etc.); X ray photoelectron spectroscopy

Indexed keywords

AMMONIUM COMPOUNDS; ETCHING; PASSIVATION; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE RECOMBINATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037454641     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02411-1     Document Type: Article

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