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Vacuum

Volumn 67, Issue 1, 2002, Pages 81-90

Electrical properties of sulfur-passivated III-V compound devices

(1) Eftekhari, G a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

Electrical properties; III V semiconductor surfaces; Passivation; Sulfidation

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; MOS DEVICES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SULFUR;

METAL-SEMICONDUCTOR (MS) CONTACTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037009285 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(02)00195-1 Document Type: Conference Paper

Times cited : (19)

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