Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 592-595

  Chen, W D ^a   Li, X Q ^b   Duan, L H ^a   Xie, X L ^a   Cui, Y D ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

PASSIVATION ENHANCEMENT MECHANISM; PHOTOLUMINESCENCE ENHANCEMENT; SULFUR PHOSPHORUS BOND;

SURFACE PHENOMENA;

EID: 0030564342     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00345-5     Document Type: Article

References (7)

1. P. Kloplenstein, G. Bastide, M. Rouzeyre, M. Gendry and J. Durand, J. Appl. Phys. 63 (1988) 150.
2. A. Kapila and V. Malhotra, Appl. Phys. Lett. 62 (1993) 1009.
3. W.D. Chen, K. Xie, L.H. Duan, X.L. Xie and Y.D. Cui, Act. Phys. Sin. (overseas edition) 4 (1995) 859.
4. W.D. Chen, X.Q. Li, L.H. Duan and X.L. Xie, Chin. J. Semicond., to be published.
5. C.W. Wilmsen, K.M. Geib, J. Shin, R. Iyer, D.L. Lile and J.J. Pouch, J. Vac. Sci. Technol. B 7 (1989) 851.
6. F. Maeda, Y. Watanabe and M. Oshima, Appl. Phys. Lett. 62 (1993) 297.
7. Y. Tao, A. Yelon, E. Sacher, Z.H. Lu and M.J. Graham, Appl. Phys. Lett. 60 (1992) 2669.