Sulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces

Surface Science

Volumn 544, Issue 2-3, 2003, Pages 320-328

  Lowe, M J ^a   Veal, T D ^a   Mowbray, A P ^b   McConville, C F ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b IQE INC   (United States)

Author keywords

Chalcogens; Electron density, excitation spectra calculations; Electron energy loss spectroscopy (EELS); Indium arsenide; Plasmons; Semiconducting surfaces; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPUTER SIMULATION; DESORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE DEFECTS;

SURFACE PHENOMENA;

EID: 0141993747     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.08.047     Document Type: Article

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