Valence band photoemission, band bending, and ionization energy of GaAs(100) treated in alcoholic sulfide solution

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 289-294

  Lebedev, Mikhail V ^a   Aono, Masakazu ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000887487     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371858     Document Type: Article

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