Measurement and modeling of carrier transport parameters applicable to SiGe BiCMOS technology operating in extreme environments

IEEE Transactions on Electron Devices

Volumn 57, Issue 3, 2010, Pages 551-561

  Moen, Kurt A ^a   Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carrier mobility; Carrier transport parameters; Cryogenic operation; Heavy ion strike; Incomplete ionization; Shockley Read Hall (SRH) recombination; SiGe; Silicon germanium heterojunction bipolar transistor (SiGeHBT); Single event effects (SEE); TCAD parameter models; Total ionizing dose (TID)

Indexed keywords

BICMOS TECHNOLOGY; BISMUTH ALLOYS; CARRIER LIFETIME; CARRIER MOBILITY; CARRIER TRANSPORT; CRYOGENICS; ELECTRONIC DESIGN AUTOMATION; HALL MOBILITY; HEAVY IONS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; IONIZATION; IONIZING RADIATION; PARAMETER ESTIMATION; TEMPERATURE DISTRIBUTION;

CRYOGENIC OPERATIONS; INCOMPLETE IONIZATION; ION STRIKES; PARAMETER MODEL; SHOCKLEY-READ-HALL RECOMBINATIONS; SIGE; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; SINGLE EVENT EFFECTS; TOTAL IONIZING DOSE; TRANSPORT PARAMETERS;

SI-GE ALLOYS;

EID: 77649184043     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2038033     Document Type: Article

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