3-D simulation of SEU hardening of SiGe HBTs using shared dummy collector

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2330-2337

  Varadharajaperumal, Muthubalan ^a   Niu, Guofu ^a   Wei, Xiaoyun ^a   Zhang, Tong ^a   Cressler, John D ^b   Reed, Robert A ^c   Marshall, Paul W ^d  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

Critical charge; Deep trench isolation (DTI); Dummy collector; Radiation hardening by design (RHBD); SiGe HBT; Single event upset (SEU); SRH recombination

Indexed keywords

RADIATION HARDENING; SEMICONDUCTING SILICON COMPOUNDS; THREE DIMENSIONAL;

DEEP TRENCH ISOLATION (DTI); DUMMY COLLECTORS; RADIATION HARDENING BY DESIGN (RHBD); SINGLE EVENT UPSET (SEU);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 37249052323     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910290     Document Type: Conference Paper

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