Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn A, Issue , 2003, Pages 87-90

  Macdonald, D ^a   Cuevas, A ^a   Rein, S ^b   Lichtner, P ^b   Glunz, S W ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; SHOCKLEY-READ-HALL MODEL; SURFACE RECOMBINATION;

ANNEALING; CARRIER CONCENTRATION; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; ION IMPLANTATION; PRECIPITATION (CHEMICAL); SINGLE CRYSTALS;

SILICON;

EID: 6344231751     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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