Physical model of incomplete ionization for silicon device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 51-54

  Schenk, Andreas ^a,b   Altermatt, Pietro P ^c   Schmithüsen, Bernhard ^a  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; IONIZATION; PHOTOLUMINESCENCE;

MOTT TRANSITION; ROOM TEMPERATURE;

SEMICONDUCTOR DEVICES;

EID: 42549101378     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282836     Document Type: Conference Paper

References (12)

1. H. Watanabe and S. Takagi, Jour. Appl. Phys. 90, 1600 (2001).
2. G. Xiao, J. Lee, J. J. Liou, and A. Ortiz-Conde, Microelectronics Reliability 39, 1299 (1999).
3. Y. Yue and J. J. Liou, Solid-State Electronics 39, 318 (1996).
4. B. Bergersen, J. A. Rostworowski, M. Eswaran, R. R. Parsons, and P. Jena, Phys. Rev. B14, 1633 (1976).
5. K. P. Abdurakhmanov, S. Mirakhmedov, and A. T. Teshabaev, Sov. Phys. Sem. 12, 457 (1987).
6. E. O. Kane, Phys. Rev. 131, 79 (1963).
7. F. Mousty, P. Ostoja, and L. Passari, Jour. Appl. Phys. 45, 4576 (1974).
8. S. S. Li and W. R. Thurber, Solid-State Electronics 20, 609 (1977).
9. W. Kuzmicz, Solid-State Electronics 29, 1223 (1986).
10. W. Nuyts and R. van Overstraeten, Jour. Appl. Phys. 42, 3988 (1971).
11. DESSIS 10.0 User's Manual, Synopsys, 2005.
12. H. Nii, C. Yoshino, S. Yoshitomi, K. Inoh, H. Furuya, H. Nakajima, H. Sugaya, H. Naruse, Y. Katsumata, and H. Iwai, IEEE TED 46, 712 (1999).