Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Birkholz, Jens E ^a   Bothe, Karsten ^a   MacDonald, Daniel ^b   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTLESS QUASI-STEADY-STATE PHOTOCONDUCTANCE (QSSPC) TECHNIQUE; ELECTRONIC PARAMETERS; HOLE CAPTURE CROSS SECTIONS; INJECTION INTENSITY;

DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; HOLE MOBILITY; MATHEMATICAL MODELS; PARTICLE BEAM INJECTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 21044458762     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897489     Document Type: Article

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