Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes

Nanotechnology

Volumn 21, Issue 11, 2010, Pages

  Bartolomeo, Antonio Di ^a,b   Rinzan, Mohamed ^b   Boyd, Anthony K ^b   Yang, Yanfei ^b   Guadagno, Liberata ^a   Giubileo, Filippo ^c   Barbara, Paola ^b  

^a UNIVERSITY OF SALERNO   (Italy)

^b GEORGETOWN UNIVERSITY   (United States)

^c CNR SPIN SALERNO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AIR INTERFACE; CHARGE RETENTION; CHARGE STORAGE; DOMINANT MECHANISM; DOUBLE-WALLED CARBON NANOTUBES; ELECTRICAL PROPERTY; MEMORY CELL; MEMORY DEVICE; MEMORY EFFECTS; NANO-SIZED; TRANSFER CHARACTERISTICS;

CARBON NANOTUBES; ELECTRIC PROPERTIES; MULTIWALLED CARBON NANOTUBES (MWCN); PHASE INTERFACES; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77349083284     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/11/115204     Document Type: Article

References (51)

1. Cao Q and Rogers J A 2009 Ultrathin films of single-walled carbon nanotubes for electronics and sensors: a review of fundamental and applied aspects Adv. Mater. 21 29-53
2. Snow E S, Novak J P, Campbell P M and Park D 2003 Random networks of carbon nanotubes as an electronic material Appl. Phys. Lett. 82 2145-47
3. Zhou Y, Gaur A, Hur S-H, Kocabas C, Meitl M A, Shim M and Rogers J A 2004 p-channel, n-channel thin film transistors and p-n diodes based on single wall carbon nanotube networks Nano Lett. 4 2031-35
4. Snow E S, Novak J P, Lay M D, Houser E H, Perkins F K and Campbell P M 2004 Carbon nanotube networks: nanomaterial for microelectronic applications J. Vac. Sci. Technol. B 22 1990-4
5. Snow E S, Campbell P M, Ancona M G and Novak J P 2005 High-mobility carbon-nanotube thin-film transistors on a polymeric substrate Appl. Phys. Lett. 86 033105
6. Takenobu T, Takahashi T, Kanbara T, Tsukagoshi K, Aoyagi Y and Iwasa Y 2006 High-performance transparent flexible transistors using carbon nanotube films Appl. Phys. Lett. 88 033511
7. Chiu P W and Chen C-H 2008 High-performance carbon nanotube network transistors for logic applications Appl. Phys. Lett. 92 063511
8. Babic B, Iqbal M and Schonenberger C 2003 Ambipolar field-effect transistor on as-grown single-wall carbon nanotubes Nanotechnology 14 327-31
9. Matsuoka K, Kataura H and Shiraishi M 2006 Ambipolar single electron transistors using side-contacted single-walled carbon nanotubes Chem. Phys. Lett. 417 540-4
10. Martel R, et al. 2001 Ambipolar electrical transport in semiconducting single-wall carbon nanotubes Phys. Rev. Lett. 87 256805
11. Yu W J, Kim U J, Kang B R, Lee I H, Lee E H and Lee Y H 2009 Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors Nano Lett. 9 1401-5
12. Shimauchi H, Ohno Y, Kishimoto S and Mizutani T 2006 Suppression of hysteresis in carbon nanotube field-effect transistors: effect of contamination induced by device fabrication process Japan. J. Appl. Phys. 45 5501-3
13. Tsukagoshi K, Sekiguchi M, Aoyagi M, Kanbara T, Takenobu T and Iwasa Y 2007 Suppression of current hysteresis in carbon nanotube thin-film transistors Japan. J. Appl. Phys. 46 L571-3
14. Lee J S, Sunmin R, Kwonjae Y, Insung C, Yun W S and Kim J 2007 Origin of gate hysteresis in carbon nanotube field-effect transistors J. Phys. Chem. C 111 12504-7
15. Lee J S, Ryu S, Yoo K, Kim J, Choi I S and Yun W S 2008 Local inhomogeneity in gate hysteresis of carbon nanotube field-effect transistors investigated by scanning gate microscopy Ultramicroscopy 108 1045-9
16. Kar S, et al. 2006 Quantitative analysis of hysteresis in carbon nanotube field-effect devices Appl. Phys. Lett. 89 132118
17. Bradley K, Cumings J, Star A, Gabriel J C and Gruner G 2003 Influence of mobile ions on nanotube based FET devices Nano Lett. 3 639-41
18. Fuhrer M S, Kim B M, Durkop T and Britlinger T 2002 High-mobility nanotube transistor memory Nano Lett. 2 755-9
19. Wang S, Sellin P, Zhang Q and Yang D 2005 Nonvolatile memory from single walled carbon nanotube-based field effect transistors Curr. Nanosci. 1 43-6
20. Collins P G, Bradley K, Ishigami M and Zettl A 2000 Extreme oxygen sensitivity of electronic properties of carbon nanotubes Science 287 1801-4
21. Shim M, Back J H, Ozel T and Kwon K W 2005 Effects of oxygen on the electron transport properties of carbon nanotubes: utraviolet desorption and thermally induced processes Phys. Rev. B 71 205411
22. Kim W, Javey A, Vermesh O, Wang Q, Li Y and Dai H 2003 Hysteresis caused by water molecules in carbon nanotube field effect transistors Nano Lett. 3 193-8
23. Na P S, et al. 2005 Investigation of the humidity effect on the electrical properties of single-walled carbon nanotube transistors Appl. Phys. Lett. 87 093101
24. Lee K W, Heo K Y, Kim K M and Kim H J 2009 Memory effects based on random networks of single-walled carbon nanotubes Nanotechnology 20 405210
25. Yang M H, Teo K B K, Gangloff L, Milne W I, Hasko D G, Robert Y and Legagneux P 2006 Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors Appl. Phys. Lett. 88 113507
26. Rispal L, Tschischke T, Yang H and Schwalke U 2008 Polymethyl methacrylate passivation of carbon nanotube field-effect transistors: novel self-aligned process and effect on device transfer characteristic hysteresis Japan. J. Appl. Phys. 47 3287-91
27. McGill S A, Rao S G, Manandhar P, Xiong P and Hong S 2006 High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly Appl. Phys. Lett. 89 163123
28. Ganguly U, Kan E C and Zhang Y 2005 Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals Appl. Phys. Lett. 87 043108
29. Chan M Y, Wei L, Chen Y, Chan L and Lee P S 2009 Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices Carbon 47 3063-70
30. Yu W J, Kang B R, Lee I H, Min Y S and Lee Y H 2009 Majority carrier type conversion with floating gates in carbon nanotube transistors Adv. Mater. 21 4821-4
31. Radosavljevic M, Freitag M, Thadani K V and Johnson A T 2002 Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors Nano Lett. 2 761-4
32. Cui J B, Sordan R, Burghard M and Kern K 2002 Carbon nanotube memory device of high charge storage stability Appl. Phys. Lett. 81 3260-2
33. Wang S and Sellin P 2005 Pronounced hysteresis and high charge storage stability of single-walled carbon nanotube-based field-effect transistors Appl. Phys. Lett. 87 133117
34. Zavodchikova M Y, et al. 2007 Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects Phys. Status Solidi b 244 4188-92
35. Rinkiö M, et al. 2008 High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric New J. Phys. 10 103019-24
36. Rinkio M, Johansson A, Paraoanu G S and Torma P 2009 High-speed memory from carbon nanotube field-effect transistors with high-k gate dielectric Nano Lett. 6 643-7
37. Wei J, Zhu H, Jiang B, Ci L and Wu D 2003 Electronic properties of double-walled carbon nanotube films Carbon 41 2495-500
38. La Mura G, et al. 2007 High-crystalline single-and double-walled carbon nanotube mats grown by chemical vapour deposition J. Phys. Chem. C 111 15154-9
39. Franklin R N, Li Y, Chen R J, Javey A and Dai H 2001 Patterned growth of single-walled carbon nanotube on full 4-inch wafers Appl. Phys. Lett. 79 4571-3
40. DiBartolomeo A, et al. 2009 Multiwalled carbon nanotube films as small-sized temperature sensors J. Appl. Phys. 105 064518
41. Lee M, Noah M, Park J, Seong M J, Kwon I K and Hong S 2009 Textured network devices: overcoming fundamental limitations of nanotube/nanowire network-based devices Small 5 1642-53
42. Collins P G, Arnolds M S and Avouris F 2001 Engineering carbon nanotubes and nanotube circuits using electrical breakdown Science 292 706-9
43. Di Bartolomeo A, Rücker H, Schley P, Fox A, Lischke S and Na K Y 2009 A single-poly EEPROM cell for embedded memory applications Solid-State Electron. 53 644-8
44. Rispal L, Tschischke T, Yang H and Schwalke U 2008 Polymethyl methacrylate passivation of carbon nanotube field effect transistors: novel self aligned process and effect on device transfer characteristics hysteresis Japan. J. Appl. Phys. 47 3287-91
45. Wolf S 1995 Silicon Processing for VLSI Era vol 3 The Submicron MOSFET (Sunset Beach, CA: Lattice Press)
46. Robert-Peillard A and Rotkin S V 2005 Modeling hysteresis phenomena in nanotube field-effect transistors IEEE Trans. Nanotechnol. 4 284-8
47. 2 layer on Si by scanning capacitance microscopy Appl. Phys. Lett. 74 1815-7
48. Iler R K 1979 The Chemistry of Silica: Solubility, Polimerization, Colloid and Surface Properties, and Biochemistry (New York: Wiley)
49. Zhuravlev L T 2000 The surface chemistry of amorphous silica. Zhuravlev model Colloid Surf. A 173 1-38
50. Sung D, Hong S, Kim Y H, Park N, Kim S, Maeng S L and Kim K C 2006 Ab initio study of the effect of water adsorption on the carbon nanotube field-effect transistor Appl. Phys. Lett. 89 243110
51. Cowin J P, Tsekouras A A, Iedema M J, Wu K and Ellison G B 1999 Immobility of protons in ice from 30 to 190 K Nature 398 405-7