Memory effects based on random networks of single-walled carbon nanotubes

Nanotechnology

Volumn 20, Issue 40, 2009, Pages

  Lee, Keun Woo ^a   Heo, Kon Yi ^a   Kim, Kyung Min ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGES; GLASS SUBSTRATES; MEMORY DEVICE; MEMORY EFFECTS; NON-VOLATILE MEMORIES; OXIDE TRAPPED CHARGE; PROGRAM/ERASE; PULSE TIME; RANDOM NETWORK; WATER MOLECULE; WORK-FUNCTION DIFFERENCE;

ACTIVATION ENERGY; CARBON NANOTUBES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

GLASS; SINGLE WALLED NANOTUBE; WATER; CARBON NANOTUBE;

ARTICLE; CONTROLLED STUDY; DEVICE; ELECTRIC POTENTIAL; ENERGY; POLARIZATION; PRIORITY JOURNAL; TEMPERATURE DEPENDENCE; DATA STORAGE DEVICE; ELECTROCHEMISTRY; EQUIPMENT DESIGN; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

COMPUTER STORAGE DEVICES; ELECTROCHEMISTRY; EQUIPMENT DESIGN; NANOTECHNOLOGY; NANOTUBES, CARBON; TRANSISTORS, ELECTRONIC;

EID: 70349676082     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/40/405210     Document Type: Article

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