Influence of mobile ions on nanotube based FET devices

Nano Letters

Volumn 3, Issue 5, 2003, Pages 639-641

  Bradley, Keith ^a   Cumings, John ^a,b   Star, Alexander ^a   Gabriel, Jean Christophe P ^a   Grüner, George ^a,c  

^a Nanomix Inc   (United States)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ION; POLYMER;

ARTICLE; DEVICE; HUMIDITY; HYSTERESIS; ION CURRENT; MATERIAL COATING; METHODOLOGY; NANOPARTICLE; SEMICONDUCTOR; SENSOR; SURFACE CHARGE; TIME; TUBE;

EID: 0141744878     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl025941j     Document Type: Article

References (21)

1. Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, Ph. Appl. Phys. Lett. 1998, 73, 2447-2449.
2. Tans, S. J.; Verschueren, R. M.; Dekker, C. Nature 1998, 393, 49-52.
3. Fuhrer, M. S.; Kim, B. M.; Durkop, T.; Brintlinger, T. Nano Lett. 2002, 2, 755-759.
4. (a) Collins, P. G.; Bradley, K.; Ishigami, M.; Zettl, A. Science 2000, 287, 1801-1804.
5. (b) Star, A.; Gabriel, J. C.; Bradley, K.; Grüner, G. Nano Lett. ASAP, 2003.
6. Duan, X.; Huang, Y.; Lieber, C. Nano Lett. 2002, 2, 487.
7. Heinze, S.; Tersoff, J.; Martel, R.; Derycke, V.; Appenzeller, J.; Avouris, Ph. Phys. Rev. Lett. 2002, 89, 106801.
8. Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Science 2001, 294, 1317-1320.
9. Radosavljevic, M.; Freitag, M.; Thadani, K. V.; Johnson, A. T. Nano Lett. 2002, 2, 761-764.
10. Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, Ph. Appl. Phys. Lett. 2002, 80, 2773-2775.
11. #SHT75, Sensirion AG, Zurich, Switzerland.
12. Mater. Res. Bull. 1999, 24 Special issue on gas sensing materials.
13. O'Connell, M. J., et al. Chem. Phys. Lett. 2001, 342, 265-271.
14. Physical chemistry of polyelectrolytes; Radeva, T., Ed.; M. Dekker: New York, 2001.
15. Sedlák, M. Langmuir 1999, 15, 4045.
16. CRC Handbook of Chemistry and Physics; Lide, D. R., Ed.; CRC Press: New York, 2001; p 5-94.
17. Electrochemical methods: fundamentals and applications; Bard, A. J., Faulkner, L. R., Eds.; Wiley and Sons: New York, 2001.
18. Shim, M.; Javey, A.; Kam, N. W. S.; Dai, H. J. J. Am. Chem. Soc. 2001, 123, 11512-11513.
19. Hansch, C.; Leo, A.; Taft, R. W. Chem. Rev. 1991, 91, 165.
20. Semiconductor material and device characterization; Schroder, D. K.; Wiley and Sons: New York, 1998.
21. Kim, W.; Javey, A.; Vermesh, O.; Wang, Q.; Li, Y.; Dai, H. Nano Lett. 2003, 3, 193-198.