Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices

Carbon

Volumn 47, Issue 13, 2009, Pages 3063-3070

  Chan, Mei Yin ^a,b   Wei, Li ^c   Chen, Yuan ^c   Chan, Lap ^b   Lee, Pooi See ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c Nanyang Technological University   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CHARGE INTERACTIONS; CHARGE STORAGE; CONDUCTANCE MODULATIONS; DEFECT STATE; ELECTRODE INTERFACE; GE NANOPARTICLES; LOCALIZED CHARGE; LOW VOLTAGE OPERATION; MEMORY DEVICE; MEMORY EFFECTS; MEMORY WINDOW; SCHOTTKY BARRIERS; TRANSPORT BEHAVIOR;

CARBON NANOTUBES; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GERMANIUM; HAFNIUM COMPOUNDS; MODULATION; NANOPARTICLES; SCHOTTKY BARRIER DIODES; WINDOWS;

CHARGE TRAPPING;

EID: 68749086116     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2009.07.017     Document Type: Article

References (36)

1. Tan S., Verschueren A., and Dekker C. Room-temperature transistor based on a single nanotube. Nature 393 (1998) 49-52
2. McEuen P.L., Fuhrer M.S., and Park H. Single-walled carbon nanotube electronics. IEEE Trans Nanotechnol 1 (2002) 78-85
3. Cao Q., and Rogers J.A. Ultrathin films of single-walled carbon nanotubes for electronics and sensors: a review of fundamental and applied aspects. Adv Mater 21 (2009) 29-53
4. Choi W.B., Chae S., Bae E., Lee J.W., Cheong B.H., Kim J.R., et al. Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel. Appl Phys Lett 82 2 (2003) 275-277
5. Ganguly U., Kan E.C., and Zhang Y.G. Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals. Appl Phys Lett 87 4 (2005) 043108-1-043108-3
6. Gruneis A., Esplandiu M.J., Garcia-Sanchez D., and Bachtold A. Detecting individual electrons using a carbon nanotube field-effect transistor. Nano Lett 7 12 (2007) 3766-3769
7. Bradley K., Cumings J., Star A., Gabriel J.-.C.P., and Gruner G. Influence of mobile ions on nanotube based FET devices. Nano Lett 2 (2003) 639-641
8. Fuhrer M.S., Kim B.M., Dürkop T., and Brintlinger T. High-mobility nanotube transistor memory. Nano Lett 2 (2002) 755-759
9. Rinki M., Johansson A., Paraonu G.S., and Trm P. High-speed memory from carbon nanotube field-effect transistors with high-κ gate dielectric. Nano Lett 9 (2009) 643-647
10. Cui J.B., Sordan R., Burghard M., and Kern K. Carbon nanotube memory devices of high charge storage stability. Appl Phys Lett 81 (2002) 3260-3262
11. Guo A., Fu Y.Y., Wang C., Guan L.H., Liu J., Shi Z.J., et al. Two-bit memory devices based on single-wall carbon nanotubes: demonstration and mechanism. Nanotechnology 18 12 (2007) 125206-125210
12. Kim W., Javey A., Vermesh O., Wang O., Li Y.M., and Dai H.J. Hysteresis caused by water molecules in carbon nanotube field-effect transistors. Nano Lett 3 2 (2003) 193-198
13. Lin Y.M., Appenzeller J., Knoch J., and Avouris P. High-performance carbon nanotube field-effect transistor with tunable polarities. IEEE Trans Nanotechnol 4 5 (2005) 481-489
14. McClain D., Thomasa N., Youkeya S., Schallera R., Jiaoa J., and O'Brien K.P. Impact of oxygen adsorption on a population of mass produced carbon nanotube field effect transistors. Carbon 47 (2009) 1493-1500
15. Klinke C., Chen J., Afzali A., and Avouris P. Charge transfer induced polarity switching in carbon nanotube transistors. Nano Lett 5 3 (2005) 555-558
16. Kaempgen M., Lebert M., Haluska M., Nicoloso N., and Roth S. Sonochemical optimization of the conductivity of single wall carbon nanotube networks. Adv Mater 20 3 (2008) 616-620
17. Chen J., Klinke C., Afzali A., and Avouris P. Self-aligned carbon nanotube transistors with charge transfer doping. Appl Phys Lett 86 12 (2005) 123108-1-123108-3
18. Chen Y., Wei L., Wang B., Lim S., Ciuparu D., Zheng M., et al. Low-defect, purified, narrowly (n,m)-dispersed single-walled carbon nanotubes grown from cobalt-incorporated MCM-41. ACS Nano 1 4 (2007) 327-336
19. 3 high-κ gate dielectric by pulsed laser ablation. Europhys Lett 74 1 (2006) 177-180
20. 3 high-κ dielectric for nonvolatile memory applications. J Appl Phys 102 9 (2007) 094307-1-094307-7
21. Ganguly U., Lee C., Hou T.H., and Kan E.C. Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories. IEEE Trans Nanotechnol 6 1 (2007) 22-28
22. 2 High-κ tunneling dielectric. Symp VLSI Tech Dig 2003. p. 33.
23. Avouris P., and Chen J. Nanotube electronics and optoelectronics. Mater Today 9 10 (2006) 46-54
24. Zafar S., Callegari A., Gusev E., and Fischetti M.V. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks. J Appl Phys 93 11 (2003) 9298-9303
25. Choi R., Rhee S.J., Lee J.C., Lee B.H., and Bersuker G. Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress. IEEE Electron Device Lett 26 3 (2005) 197-199
26. Heinze S., Tersoff J., Martel R., Derycke V., Appenzeller J., and Avouris P. Carbon nanotubes as Schottky barrier transistors. Phys Rev Lett 89 10 (2002) 106801-1-106801-4
27. Guo J., Kan E.C., Ganguly U., and Zhang Y.G. High sensitivity and nonlinearity of carbon nanotube charge-based sensors. J Appl Phys 99 8 (2006) 084301-1-084301-5
28. Gui E.L., Li L.J., Zhang K.K., Xu Y.P., Dong X.C., Ho X.N., et al. DNA sensing by field-effect transistors based on networks of carbon nanotubes. J Am Chem Soc 129 46 (2007) 14427-14432
29. Lee C.W., Zhang K., Tantang H., Lohani A., Mhaisalkar S.G., Li L.J., et al. Tuning of electrical characteristics in networked carbon nanotube field-effect transistors using thiolated molecules. Appl Phys Lett 91 10 (2007) 103515-1-103515-3
30. Baik S.J., Choi S., Chung U.I., and Moon J.T. Engineering on tunnel barrier and dot surface in Si nanocrystal memories. Solid-State Electron 48 9 (2004) 1475-1481
31. Koh B.H., Kan E.W.H., Chim W.K., Choi W.K., Antoniadis D.A., and Fitzgerald E.A. Traps in germanium nanocrystal memory and effect on charge retention: modeling and experimental measurements. J Appl Phys 97 12 (2005) 124305-1-124305-9
32. 2 defects by spectroscopic ellipsometry. In: Proceedings of the fiftieth AVS international symposium, Nov 02-07 2003, Baltimore, MD: A V S Amer Inst Physics; 2003. p. 1337-41.
33. Shi Y., Saito K., Ishikuro H., and Hiramoto T. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals. J Appl Phys 84 4 (1998) 2358-2360
34. Haesslein H., Sielemann R., and Zistl C. Vacancies and self-interstitials in germanium observed by perturbed angular correlation spectroscopy. Phys Rev Lett 80 12 (1998) 2626-2629
35. 2 tunneling dielectrics. IEEE Trans Electron Devices 50 9 (2003) 1823-1829
36. Yamada S., Hiura Y., Yamane T., Amemiya K., Ohshima Y., and Yoshikawa K. Degradation mechanism of flash EEPROM programming after program/erase cycles. IEEE IEDM Tech Digest (1993) 23-26