Local inhomogeneity in gate hysteresis of carbon nanotube field-effect transistors investigated by scanning gate microscopy

Ultramicroscopy

Volumn 108, Issue 10, 2008, Pages 1045-1049

  Lee, Joon Sung ^a,b   Ryu, Sunmin ^a   Yoo, Kwonjae ^a   Kim, Jinhee ^a   Choi, Insung S ^b   Yun, Wan Soo ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Charge trap; CNFET; CNT; Defect; SGM; Silicon oxide

Indexed keywords

ELASTICITY; FIELD EFFECT TRANSISTORS; HYSTERESIS; MARKUP LANGUAGES; NANOCOMPOSITES; NANOPORES; NANOSENSORS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; OPTICAL DESIGN; SCANNING; SILICON COMPOUNDS; TRANSISTORS;

A-CARBON; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHARGE TRAP; CNFET; CNT; DEFECT; IN-HOMOGENEITY; SCANNING GATE MICROSCOPY; SGM; SILICON OXIDE;

CARBON NANOTUBES;

CARBON NANOTUBE; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTOR; HYSTERESIS; LOW TEMPERATURE; PIEZOELECTRICITY; SCANNING ELECTRON MICROSCOPY;

EID: 49949084224     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.04.067     Document Type: Article

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