Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy

Applied Physics Letters

Volumn 74, Issue 13, 1999, Pages 1815-1817

  Kang, C J ^a   Buh, G H ^a   Lee, S ^a   Kim, C K ^a   Mang, K M ^a   Im, C ^a   Kuk, Y ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; HOLE TRAPS; IMAGE ANALYSIS; MICROSCOPIC EXAMINATION; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

IMAGE ANALYSIS; QUANTUM-MECHANICAL TUNNELING MODEL; SCANNING CAPACITANCE MICROSCOPY;

MOSFET DEVICES;

EID: 0032615491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123095     Document Type: Article

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19. Although a single exponential curve cannot fit the measured voltage shifts in the entire range for each channel length, it fits well in the beginning of the detrapping process. It suggests that more than one detrapping process is involved.