Review of current status of III-V MOSFETs

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 275-286

  Thayne, I G ^a   Hill, R J W ^a   Holland, M C ^a   Li, X ^a   Zhou, H ^a   Macintyre, D S ^a   Thorns, S ^a   Kalna, K ^a   Stanley, C R ^a   Asenov, A ^a   Droopad, R ^b   Passlack, M ^c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b TEXAS STATE UNIVERSITY   (United States)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS;

CURRENT STATUS; DEVICE ARCHITECTURES; HIGH ELECTRON MOBILITY; HIGH MOBILITY CHANNELS; III-V MOSFETS; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; N-CHANNEL DEVICES; PERFORMANCE METRICS;

MOSFET DEVICES;

EID: 77149174836     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119552     Document Type: Conference Paper

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