Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 277-281

  Paterson, G W ^a   Wilson, J A ^a   Moran, D ^a   Hill, R ^a   Long, A R ^a   Thayne, I ^a   Passlack, M ^b   Droopad, R ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

DX centres; Electron conduction; Gallium arsenide; Gallium oxide; Metal oxide semiconductor structures; Work function

Indexed keywords

ELECTRIC POTENTIAL; ELECTRONS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS;

DX CENTRES; ELECTRON CONDUCTION; GALLIUM ARSENIDE; GALLIUM OXIDE; METAL OXIDE SEMICONDUCTOR STRUCTURES; WORK FUNCTION;

WSI CIRCUITS;

EID: 33750723503     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.026     Document Type: Article

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