Insulator passivation of Ino 0.2Ga 0.8As-GaAs surface quantum wells

IEEE Journal of Quantum Electronics

Volumn 34, Issue 2, 1998, Pages 307-310

  Passlack, M ^a,b,c   Hong, M ^a,c   Harris, T D ^a   Mannaerts, J P ^a   Vakhshoori, D ^a   Schnoes, M L ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Phoenix Corporation Research Laboratories   (United States)

^c IEEE   (United States)

Author keywords

Electronic passivation of compound semiconductors; In situ deposition; Internal quantum efficiency; Nonradiative lifetimes

Indexed keywords

AMORPHOUS FILMS; BAND STRUCTURE; DENSITY (OPTICAL); ELECTRIC INSULATING MATERIALS; INTERFACES (MATERIALS); OPTOELECTRONIC DEVICES; PASSIVATION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

IDENTICAL INTERNAL QUANTUM EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031999499     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.658720     Document Type: Article

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