Visible and 1.54 μm emission from amorphous silicon nitride films by reactive cosputtering

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 114-123

  Yerci, Selçuk ^a   Li, Rui ^a   Kucheyev, Sergei O ^b   Van Buuren, Tony ^b   Basu, Soumendra N ^a   Dal Negro, Luca ^a  

^a Boston University   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Amorphous semiconductors; Erbium; Photoluminescence; Silicon alloys

Indexed keywords

DE-EXCITATIONS; ER-DOPED; ERBIUM DOPED; ON CHIPS; OPTICAL EMISSIONS; OPTICALLY ACTIVE; REACTIVE CO-SPUTTERING; REACTIVE MAGNETRON CO-SPUTTERING; SI TECHNOLOGY; STRUCTURAL AND OPTICAL PROPERTIES; VISIBLE EMISSIONS;

AMORPHOUS ALLOYS; AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ERBIUM; ERBIUM ALLOYS; LIGHT; LIGHT EMISSION; LIGHT SOURCES; NANOPHOTONICS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON NITRIDE;

AMORPHOUS SILICON;

EID: 76949096436     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2032516     Document Type: Article

References (56)

1. L. Pavesi, S. Gaponenko, and L. Dal Negro, Towards the First Silicon Laser, vol.93. Dordrecht, The Netherlands: Kluwer, 2003.
2. M. Lipson, "Guiding, modulating, and emitting light on silicon-Challenges and opportunities," J. Lightw. Technol., vol.23, no.12, pp. 4222-4238, Dec. 2005.
3. D. J. Lockwood and L. Pavesi, Silicon Photonics. Berlin, Germany: Springer-Verlag, 2004.
4. N. Daldosso, M. Luppi, S. Ossicini, E. Degoli, R. Magri, G. Dalba, P. Fornasini, R. Grisenti, F. Rocca, L. Pavesi, S. Boninelli, F. Priolo, C. Spinella, and F. Iacona, "Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 ," Phys. Rev. B, vol.68, pp. 85327-85327, 2003.
5. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol.57, pp. 1046-1048, 1990.
6. O. Boyraz and B. Jalali, "Demonstration of a silicon Raman laser," Opt. Exp., vol.12, pp. 5269-5273, 2004.
7. H. S. Rong, A. S. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu,A. Fang, andM. Paniccia, "An all-silicon Raman laser," Nature, vol.433, pp. 292-294, 2005.
8. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, "Optical gain in silicon nanocrystals," Nature, vol.408, pp. 440-444, 2000.
9. J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si," Opt. Exp., vol.15, pp. 11272-11277, 2007.
10. K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, "Silicon-based visible light-emitting devices integrated into microelectronic circuits," Nature, vol.384, pp. 338-341, 1996.
11. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nat. Mater., vol.4, pp. 143-146, 2005.
12. H. S. Rong, R. Jones, A. S. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, "A continuous-wave Raman silicon laser," Nature, vol.433, pp. 725-728, 2005.
13. G. Franzo, A. Irrera, E. C.Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, " Electroluminescence of silicon nanocrystals in MOS structures," Appl. Phys. A -Mater. Sci. Process., vol.74, pp. 1-5, 2002. (Pubitemid 41200756)
14. F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, "Electroluminescence at 1.54 mu m in Er-doped Si nanocluster-based devices," Appl. Phys. Lett., vol.81, pp. 3242-3244, 2002.
15. A. S. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor," Nature, vol.427, pp. 615-618, 2004. (Pubitemid 38248476)
16. V. R. Almeida, C. A. Barrios, R. R. Panepucci, andM. Lipson, "All-optical control of light on a silicon chip," Nature, vol.431, pp. 1081-1084, 2004. (Pubitemid 39480684)
17. O. I. Dosunmu, D. D. Cannon, M. K. Emsley, B. Ghyselen, J. F. Liu, L. C. Kimerling, andM. S. Unlu, "Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates," IEEE J. Sel. Topics Quantum Electron., vol.10, no.4, pp. 694-701, Jul./Aug. 2004.
18. M. Loncar, D. Nedeljkovic, T. Doll, J. Vuckovic, A. Scherer, and T. P. Pearsall, "Waveguiding in planar photonic crystals," Appl. Phys. Lett., vol.77, pp. 1937-1939, 2000.
19. M. Makarova, V. Sih, J. Warga, R. Li, L. Dal Negro, and J. Vuckovic, "Enhanced light emission in photonic crystal nanocavities with Erbiumdoped silicon nanocrystals," Appl. Phys. Lett., vol.92, pp. 161107-1-161107-3, 2008.
20. G. Franzo, V. Vinciguerra, and F. Priolo, "The excitation mechanism of rare-earth ions in silicon nanocrystals," Appl. Phys. A: Mater. Sci. Process., vol.69, pp. 3-12, 1999.
21. M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, "1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+," Appl. Phys. Lett., vol.71, pp. 1198-1200, 1997.
22. M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzo, F. Priolo, and F. Iacona, "Sensitization of Er luminescence by Si nanoclusters," Phys. Rev. B, vol.69, pp. 233315-1-233315-4, 2004.
23. M. Fujii, M. Yoshida, S. Hayashi, and K. Yamamoto, " Photoluminescence from SiO2 films containing Si nanocrystals and Er: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+," J. Appl. Phys., vol.84, pp. 4525-4531, 1998.
24. D. Pacifici, G. Franzo, F. Priolo, F. Iacona, and L. Dal Negro, "Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification," Phys. Rev. B, vol.67, pp. 245301.1-245301.13, 2003.
25. L. Dal Negro, S. Hamel, N. Zaitseva, J. H. Yi, A. Williamson, M. Stolfi, J. Michel, G. Galli, and L. C. Kimerling, "Synthesis, characterization, and modeling of nitrogen-passivated colloidal and thin film silicon nanocrystals," IEEE J. Sel. Topics Quantum Electron., vol.12, no.6, pp. 1151-1163, Nov./Dec. 2006.
26. L. DalNegro, R. Li, J.Warga, and S.N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett., vol.92, pp. 181105-1-181105-3, 2008.
27. L. Dal Negro, J. H. Yi, M. Hiltunen, J. Michel, L. C. Kimerling, S. Hamel, A. J. Williamson, G. Galli, T. W. F. Chang, V. Sukhovatkin, and E. H. Sargent, "Light-emitting silicon-rich nitride systems and photonic structures," J. Exp. Nanosci., vol.1, pp. 29-50, 2006.
28. L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T. W. F. Chang, V. Sukhovatkin, and E. H. Sargent, "Light emission efficiency and dynamics in silicon-rich silicon nitride films," Appl. Phys. Lett., vol.88, pp. 183103-1-183103-3, 2006.
29. L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, "Light-emitting silicon nanocrystals and photonic structures in silicon nitride," IEEE J. Sel. Topics Quantum Electron., vol.12, no.6, pp. 1628-1635, Nov./Dec. 2006.
30. L. Dal Negro, R. Li, J. Warga, S. Yerci, S. Basu, S. Hamel, and G. Galli, "Light emission from silicon rich nitride structures," in Silicon Nanophotonics: Basic Principles, Present Status and Perspectives, L.Khriachtchev, Ed. Singapore: World Scientific, 2008.
31. R. Li, J. R. Schneck, J. Warga, L. D. Ziegler, and L. Dal Negro, "Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals," Appl. Phys. Lett., vol.93, pp. 091119-1-091119-3, 2008.
32. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, "Electroluminescence from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett., vol.93, pp. 151116-1-151116-3, 2008.
33. G. Y. Sung, N. M. Park, J. H. Shin, K. H. Kim, T. Y. Kim, K. S. Cho, and C. Huh, "Physics and device structures of highly efficient silicon quantum dots based silicon nitride light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol.12, no.6, pp. 1545-1555, Nov./Dec. 2006.
34. S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, and L. Dal Negro, "Energy transfer and 1.54 μm emission in amorphous silicon nitride films," Appl. Phys. Lett., vol.95, pp. 0311107-1-0311107-3, 2009.
35. R. Li, S. Yerci, and L. Dal Negro, "Temperature dependence of the energy transfer from amorphous Silicon nitride to Er ions," Appl. Phys. Lett., vol.95, pp. 041111-1-041111-3, 2009.
36. A. Polman, "Erbium implanted thin film photonic materials," J. Appl. Phys., vol.82, pp. 1-39, 1997.
37. L. R. Doolittle, "Algorithms for the rapid simulation of Rutherford Backscattering spectra," Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms., vol.9, pp. 344-351, 1985.
38. J. R. I. Lee and T. van Buuren, personal communication, May 2009.
39. B. S. Sahu, O. P. Agnihotri, S. C. Jain, R.Mertens, and I. Kato, "Influence of hydrogen on losses in silicon oxynitride planar optical waveguides," Semicond. Sci. Technol., vol.15, pp. L11-L14, 2000. (Pubitemid 30565659)
40. K. M. Mikhail Baklanov andM. Green, Dielectric Films for Advanced Microelectronics (Wiley Series in Materials for Electronic & Optoelectronic Applications), 1st ed. New York: Wiley, Apr. 6, 2007.
41. F. Giorgis, P. Mandracci, L. Dal Negro, C.Mazzoleni, and L. Pavesi, "Optical absorption and luminescence properties of wide-band gap amorphous silicon based alloys," J. Non-Crystalline Solids, vol.266, pp. 588-592, 2000.
42. F. Giorgis, C. Vinegoni, and L. Pavesi, "Optical absorption and photoluminescence properties of alpha-Si1-xNx : H films deposited by plasmaenhanced CVD," Phys. Rev. B, vol.61, pp. 4693-4698, 2000.
43. H. G. Tompkins, R. B. Gregory, P. W. Deal, and S. M. Smith, "Analysis of silicon oxynitrides with spectroscopic ellipsometry and Auger spectroscopy, compared to analyses by Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy," J. Vacuum Sci. Technol. A: Vacuum, Surfaces, Films, vol.17, pp. 391-397, 1999.
44. H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, "Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films," J. Appl. Phys., vol.93, pp. 239-244, 2003.
45. F. Giorgis, C. F. Pirri, C. Vinegoni, and L. Pavesi, "Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers," Phys. Rev. B, vol.60, pp. 11572-11576, 1999.
46. M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, "Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence," J. Appl. Phys., vol.104, pp. 083505-1-083505-4, 2008.
47. F. Boulitrop and D. J. Dunstan, "Phonon interactions in the tail states of alpha-Si-H," Phys. Rev. B, vol.28, pp. 5923-5929, 1983.
48. D. J. Dunstan and F. Boulitrop, "Photoluminescence in hydrogenated amorphous-silicon," Phys. Rev. B, vol.30, pp. 5945-5957, 1984.
49. R. A. Street, "Luminescence in amorphous semiconductors," Adv. Phys., vol.25, pp. 397-453, 1976.
50. W. C. Ding, D. Hu, J. Zheng, P. Chen, B. W. Cheng, J. Z. Yu, and Q. M. Wang, "Strong visible and infrared photoluminescence from Erimplanted silicon nitride films," J. Phys. D -Appl. Phys., vol.41, pp. 135101-1-135101-4, 2008.
51. M. Fujii, K. Imakita, K. Watanabe, and S. Hayashi, "Coexistence of two different energy transfer processes in SiO2 films containing Si nanocrystals and Er," J. Appl. Phys., vol.95, pp. 272-280, 2004.
52. K. Watanabe, M. Fujii, and S. Hayashi, "Resonant excitation of Er3+ by the energy transfer from Si nanocrystals," J. Appl. Phys., vol.90, pp. 4761-4767, 2001. (Pubitemid 33598676)
53. O. Savchyn, R. M. Todi, K. R. Coffey, and P. G. Kik, "Multilevel sensitization of Er3+ in low-temperature-annealed silicon-rich SiO[sub 2]," Appl. Phys. Lett., vol.93, pp. 233120-1-233120-3, 2008.
54. F. Priolo, G. Franzo, D. Pacifici, V. Vinciguerra, F. Iacona, and A. Irrera, "Role of the energy transfer in the optical properties of undoped and Erdoped interacting Si nanocrystals," J. Appl. Phys., vol.89, pp. 264-272, 2001.
55. A. Polman,D. C. Jacobson, D. J. Eaglesham, R. C. Kistler, and J. M. Poate, "Optical doping of wave-guide materials by Mev Er implantation," J. Appl. Phys., vol.70, pp. 3778-3784, 1991.
56. P. C. Becker, N. A. Olsson, and J. R. Simpson, Erbium-Doped Fiber Amplifiers-Fundamentals and Technology. San Diego, CA:Academic, 1999.