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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions

(3) Li, R a Yerci, S a Dal Negro, L a

a Boston University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY TIME; EMISSION LIFETIME; ENERGY COUPLINGS; ER-DOPED; EXCESS SI; NON-RADIATIVE; ON CHIPS; SI CONCENTRATION; SI-BASED; TEMPERATURE DEPENDENCE; TEMPERATURE QUENCHING; TEMPERATURE RANGE; TRAP CENTER;

AMORPHOUS FILMS; ENERGY TRANSFER; ERBIUM; LIGHT; LIGHT SOURCES; NANOPHOTONICS; QUENCHING; SILICON NITRIDE; TEMPERATURE DISTRIBUTION;

AMORPHOUS SILICON;

EID: 68249086854 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3186062 Document Type: Article

Times cited : (46)

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