Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3242-3244

  Iacona, F ^a   Pacifici, D ^b   Irrera, A ^b   Miritello, M ^b   Franzo G ^b   Priolo, F ^b   Sanfilippo, D ^c   Di Stefano, G ^c   Fallica, P G ^c  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; ELECTRICAL PUMPING; ELECTROLUMINESCENCE PROPERTIES; ER-DOPED; EXCITATION CROSS SECTION; MATRIX; METAL OXIDE SEMICONDUCTOR; ORDERS OF MAGNITUDE; ROOM TEMPERATURE; SI NANOCLUSTER;

ERBIUM; NANOCLUSTERS; OPTICAL PUMPING; SILICON; SILICON COMPOUNDS;

ELECTROLUMINESCENCE;

EID: 79956047243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516235     Document Type: Article

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