Strong visible and infrared photoluminescence from Er-implanted silicon nitride films

Journal of Physics D: Applied Physics

Volumn 41, Issue 13, 2008, Pages

  Ding, W C ^a   Hu, D ^a   Zheng, J ^a   Chen, P ^a   Cheng, B W ^a   Yu, J Z ^a   Wang, Q M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); NITRIDES; NONMETALS; PLASMA DEPOSITION; SILICON; SILICON NITRIDE; SUGAR (SUCROSE);

CHEMICAL; CONCENTRATION (COMPOSITION); ERBIUM IONS; INFRARED PHOTOLUMINESCENCE (IR PL); SILICON-NITRIDE FILMS;

ERBIUM;

EID: 48249101575     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/13/135101     Document Type: Article

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