New approach to rapid characterization of single-crystalline silicon carbide

Technical Physics Letters

Volumn 36, Issue 1, 2010, Pages 80-82

  Mynbaeva, M G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 76649085554     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063785010010256     Document Type: Article

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