Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1709-1713

  Grim, J R ^a   Benamara, M ^a   Skowronski, M ^a   J Everson, W ^b   Heydemann, V D ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; POLISHING; SEMICONDUCTING DIAMONDS; TRANSMISSION ELECTRON MICROSCOPY;

BURGERS VECTORS; DISLOCATION DENSITY; SUBSURFACE DAMAGE;

SILICON CARBIDE;

EID: 33846885463     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/035     Document Type: Article

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