Defect characterization of 4H-SiC wafers for power electronic device applications

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13397-13402

  Ferrero, S ^a   Porro, S ^a   Giorgis, F ^a   Pirri, C F ^a   Mandracci, P ^a   Ricciardi, C ^a   Scaltrito, L ^a   Sgorlon, C ^b   Richieri, G ^b   Merlin, L ^b  

^a POLITECNICO DI TORINO   (Italy)

^b IRCI International Rectifier Corporation Italia   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; HIGH TEMPERATURE PROPERTIES; MICROSCOPIC EXAMINATION; MORPHOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

CRYSTALLOGRAPHIC QUALITY; DEFECT CHARACTERIZATION; DEFECT MORPHOLOGY; DEVICE PERFORMANCE; POWER ELECTRONIC DEVICE APPLICATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037122085     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/394     Document Type: Article

References (6)

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3. Zhou W L. Pirouz P and Powell J A 1998 Mater. Sci. Forum 264-268, 417-420
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5. Bourton J C, Sun L, Pophristic M, Luckacs S J, Long F H, Feng Z C and Ferguson I T 1998 J. Appl. Phys. 84 6268-6273
6. Defives D, Noblanc O, Dua C, Brylinski C, Barthula M. Aubry-Fortuna V and Meyer F 1999 IEEE Trans. Electron Devices 46