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Volumn 44, Issue 37-41, 2005, Pages

Nondestructive analysis of crystal defects in 4H-SiC epilayer by devised electron-beam-induced current method

Author keywords

Defect; Dislocation; EBIC; Schottky; SiC

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; GRAIN BOUNDARIES; NONDESTRUCTIVE EXAMINATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; VOLTAGE CONTROL;

ACCELERATING VOLTAGE; BASAL PLANE DISLOCATION; EBIC;

CRYSTAL DEFECTS;

EID: 32144440644 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L1271 Document Type: Article

Times cited : (6)

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