A study of nitrogen incorporation in PVT Growth of n+ 4H SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 59-62

  Hansen, D M ^a   Chung, G ^a   Loboda, M J ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

4H SiC; Bulk growth; Nitrogen; PVT

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; GROWTH TEMPERATURE; NITROGEN; PARTIAL PRESSURE;

BOULE GROWTH; BULK GROWTH; NITROGEN INCORPORATION; PHYSICAL VAPOR TRANSPORT (PVT); WAFER RESISTIVITY;

SILICON CARBIDE;

EID: 37849031761     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.59     Document Type: Conference Paper

References (8)

1. G. Augustine, H. McD. Hobgood, V. Balakrishna, G. Dunne, and R.H. Hopkins in: SiC:A Review of Fundamental Questions and Applications to Current Device Tehcnology, edited by W. J. Choyke, H. Matsunami, and G. Pensl Akademie Verlag (1997), p. 137.
2. D. Schulz, K. Irmscher, J. Dolle, W. Eiserbeck, T. Muller, H.J. Rost, D. Siehe, G. Wagner, and J. Wollweber: Mat. Sci. Forum Vols. 338-342 (2000), p. 87.
3. M. Naitoh, K. Hará, F. Hirose, S. Onda: J. Cryst. Growth Vol 237-239 (2002), p. 1192.
4. E. Rauls, U. Gerstmann, Th. Frauenheim, and H. Overhof: Physica B Vol. 340-342 (2003), p. 184.
5. R.R. Siergiej, R.C. Clarke, S. Sriram, A.K. Agarwal, R.J. Bojko, A.W. Morse, V. Balakrishna, M.F. MacMillan, A.A. Burk, and C.D. Brandt: Mat. Sci. and Eng. Vols. B61-62 (1999), p. 9.
6. H.J. Rost, D. Schulz, and D. Siche in: Silicon Carbide Recent Major Advances, edited by W.J. Choyke, H. Matsunami, and Pensl, Springer Verlag (2004), p. 163.
7. H.J. Rost, K. Irmscher, J. Doerschel, D. Siehe, D. Schulz, and J. Wollweber: Mat. Sci. Forum Vols. 433-436 (2003), p. 91.
8. Q. Li, A. Polyakov, M. Skowronski, E. Sanchez, M. J. Loboda, M. A. Fanton, Timothy Bogart and R. D. Gamble, these Proceedings.