Porous GaN/SiC templates for homoepitaxial growth: Effect of the built-in stress on the formation of porous structures

Semiconductor Science and Technology

Volumn 20, Issue 1, 2005, Pages 50-55

  Mynbaeva, M G ^a   Mynbaev, K D ^a   Sarua, A ^b   Kuball, M ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; POROUS MATERIALS; SILICON CARBIDE; STRESS ANALYSIS;

HOMOEPITAXIAL GROWTH; POROUS STRUCTURE; POROUS TEMPLATES; STRESS REDUCTION;

HETEROJUNCTIONS;

EID: 12144271424     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/1/008     Document Type: Article

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