Defect observation in SiC wafers by room-temperature photoluminescence mapping

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 53-57

  Higashi, E ^a,b   Tajima, M ^a   Hoshino, N ^a   Hayashi, T ^c   Kinoshita, H ^c   Shiomi, H ^c   Matsumoto, S ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c SiXON Ltd   (Japan)

Author keywords

Defect; Mapping; Photoluminescence; SiC

Indexed keywords

DISLOCATIONS (CRYSTALS); IMPURITIES; MAPPING; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; VANADIUM;

MAPPING PATTERNS; MICROPIPES; PHOTOLUMINESCENCE SPECTROSCOPY; VARIATION OF INTENSITY;

SILICON WAFERS;

EID: 33746798535     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.007     Document Type: Article

References (6)

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