Substrate and epitaxial issues for SiC power devices

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 940-945

  Spencer, M G ^a   Palmour, John ^b   Carter, Calvin ^b  

^a Cornell University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Bulk growth; Defects; Epitaxial growth; Micropipes; SiC

Indexed keywords

CRYSTAL IMPURITIES; EPITAXIAL GROWTH; MESFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

BULK GROWTH; MICROPIPE DENSITY; MULTIWAFER REACTORS; POWER DEVICES;

POWER ELECTRONICS;

EID: 0036565570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998608     Document Type: Article

References (47)

1. Progress in SiC: From material growth to commercial development
2. The status of SiC bulk growth from an industrial point of view
3. Investigation of the growth process of ingots of silicon carbide single crystals
4. Sublimation of silicon carbide to produce large device quality single crystals of silicon carbide
5. Performance limiting micropipe defects in silicon carbide wafers
6. Structural macro defects in silicon carbide wafers
7. Capillary equilibria of dislocated crystals
8. An optical X-ray study of giant screw dislocations in silicon carbide
9. Characterization of SiC using synchrotron white beam X-ray topography
10. Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
11. Structural investigation on the nature of surface defects present in silicon carbide wafers containing varying amount of micropipes
12. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (> 250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
13. Influence of epitaxial growth and substrate induced defects on the breakdown of high voltage 4H-SiC Schottky diodes
14. Chemomechanical polishing of silicon carbide
15. Polishing and surface characterization of SiC substrates
16. Polycrystalline cubic silicon carbide photoconductive switch
17. Growth of beta SiC on a ceramic SiC substrate using a thin silcon intermediate layer
18. Production of largest-area single crystal wafers of cubic SiC for semiconductor devices
19. Epitaxial growth and electrical characteristics of cubic SiC on silicon
20. Schottky barrier characteristics of 3C-SiC epilayers grown by low pressure chemical vapor deposition
21. An overview of SiC epitaxial growth
22. Performance and reliability issues of SiC diodes
23. Single crystal growth of SiC and electronic devices
24. SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor
25. Electron mobility models for 4H, 6H and 3C-SiC
26. Measurement of high field electron transport in silicon carbide
27. Time-resolved imaging of radiative recombination in 4H-SiC p-I-n diode
28. First results on silicon carbide vapor phase epitaxy growth in a new type of vertical low pressure chemical vapor deposition reactor
29. High temperature CVD growth of SiC
30. Morphology control of thick epitaxial 4H-SiC layers
31. Investigation of defects in epitaxial 3C-SiC, 4H-SiC and 6H-SiC films grown on SiC substrates
32. Controlled growth of 3C-SiC and 6H-SiC films on low angle vicinal (0001) 6H-SiC wafers
33. Surface morphology of silicon carbide epitaxial films
34. The mechanism of cubic SiC nucleation on off-axis substrates
35. DARPA silicon carbide (SiC) high-power
36. Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
37. Step bunching in chemical vapor deposition of 6H- and 4H-SiC on vicinal SiC(0001) faces
38. Effect of tilt angle on the morphology of SiC epitaxial films grown on vicinal (0001) 6H-sic wafers
39. Terrace growth and polytype development in epitaxial beta-SiC on alpha SiC (6H and 15R) substrates
40. Luminescence from stacking faults in 4H-SiC
41. Long term operation of 4.5 kV PiN and 2.5 kV JBS diodes
42. Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes
43. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation