Characterization of intrinsic defects in high-purity high-resistivity p-type 6H-SiC

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 1, 2008, Pages 7052-7055

  Matsuura, Hideharu ^a   Yanase, Hirokazu ^a   Takahashi, Miyuki ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

6H SiC; Deep level; High purity SiC; High resistivity SiC; Hole trap; ICTS; Intrinsic defect; P type SiC

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DEFECTS; HOLE TRAPS;

6H-SIC; DEEP LEVEL; HIGH-PURITY SIC; HIGH-RESISTIVITY SIC; ICTS; INTRINSIC DEFECT; P-TYPE SIC;

SILICON CARBIDE;

EID: 55149101575     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7052     Document Type: Article

References (21)

1. U. Gerstmann, E. Rauls, and H. Overhof: Phys. Rev. B 70 (2004) 201204.
2. R. Aavikko, K. Saarinen, F. Tuomisto, B. Magnusson, N. T. Son, and E. Janzén: Phys. Rev. B 75 (2007) 085208.
3. W. C. Mitchel, W. D. Michell, H. E. Smith, G. Landis, S. R. Smith, and E. R. Glaser: J. Appl. Phys. 101 (2007) 053716.
4. D. V. Lang: J. Appl. Phys. 45 (1974) 3023.
5. D. K. Schroder: Semiconductor Materials and Device Characterization (Wiley, New York, 1998) 2nd ed., pp. 276 and 290.
6. H. Matsuura, H. Iwata, S. Kagamihara, R. Ishihara, M. Komeda, H. Imai, M. Kikuta, Y. Inoue, T. Hisamatsu, S. Kawakita, T. Ohshima, and H. Itoh: Jpn. J. Appl. Phys. 45 (2006) 2648.
7. K. Danno and T. Kimoto: Jpn. J. Appl. Phys. 45 (2006) L285.
8. K. Danno and T. Kimoto: Mater. Sci. Forum 556-557 (2007) 331.
9. H. Okushi and Y. Tokumaru: Jpn. J. Appl. Phys. 19 (1980) L335.
10. H. Matsuura, T. Okuno, H. Okushi, and K. Tanaka: J. Appl. Phys. 55 (1984) 1012.
11. H. Matsuura: J. Appl. Phys. 64 (1988) 1964.
12. H. Matsuura: J. Appl. Phys. 68 (1990) 1138.
13. H. Matsuura and H. Okushi: in Amorphous and Micro-Crystalline Semiconductor Devices Vol. II: Materials and Device Physics, ed. J. Kanicki (Artech House, Boston, MA, 1992) Chap. 11.
14. H. Matsuura, M. Takahashi, S. Nagata, and K. Taniguchi: J. Mater. Sci.: Mater. Electron. 19 (2008) 810.
15. M. Takahashi and H. Matsuura: Proc. Int. Conf. Silicon and Carbide and Related Materials 2007, Otsu, 2007, to be published in Mater. Sci. Forum.
16. A. G. Milnes: Deep Impurities in Semiconductors (Wiley, New York, 1973) p. 116.
17. J. Singh: Semiconductor Devices: An Introduction (McGraw-Hill, New York, 1994) p. 172.
18. K. F. Brennan: The Physics of Semiconductors with Applications to Optoelectronic Devices (Cambridge University Press, Cambridge, U.K., 1999) p. 499.
19. A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, G. Kögel, M. Yoshikawa, H. Itoh, R. Krause-Rehberg, W. Triftshäuser, and G. Pensl: in Silicon Carbide, ed. W. J. Choyke, H. Matsunami, and G. Pensl (Springer, Berlin, 2004) p. 577.
20. N. T. Son, B. Magnusson, and E. Janzén: Appl. Phys. Lett. 81. (2002) 3945.
21. V. V. Afanas'ev, M. Bassier, G. Pensl, M. J. Schulz, and E. Stein von Kamienski: J. Appl. Phys. 79 (1996) 3108.