Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Physica B: Condensed Matter

Volumn 405, Issue 6, 2010, Pages 1526-1531

  Yoon, Mihyun ^a   Im, Kyungtaek ^a   Yang, Jahyun ^a   Lim, Sangwoo ^a  

^a Yonsei University   (South Korea)

Author keywords

Absorption coefficient; Annealing; Crystalline fraction; Microcrystalline Si

Indexed keywords

ABSORPTION COEFFICIENT; ABSORPTION COEFFICIENTS; AMBIENT GAS; ANNEALING CONDITION; ANNEALING PROCESS; CRYSTAL SIZE; CRYSTALLINE FRACTIONS; MICROCRYSTALLINE SI; OPTICAL ABSORPTION; OPTICAL ABSORPTION PROPERTIES; SI FILMS;

ABSORPTION; ANNEALING; CHEMICAL VAPOR DEPOSITION; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; MICROCRYSTALLINE SILICON; OPTICAL PROPERTIES; PLASMA DEPOSITION; THIN FILM DEVICES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76349123149     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.12.034     Document Type: Article

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