Post-deposition thermal annealing studies of hydrogenated microcrystalline silicon deposited at 40 °C

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7495-7498

  Bronsveld, P C P ^a   van der Wagt, H J ^a   Rath, J K ^a   Schropp, R E I ^a   Beyer, W ^b  

^a UTRECHT UNIVERSITY   (Netherlands)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Annealing; Fourier transform infrared spectroscopy (FTIR); Hydrogen; Silicon

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; INFRARED ABSORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

COLUMNAR MICROSTRUCTURE; GAS EFFUSION; MICROCRYSTALLINE MATERIAL; THERMAL ANNEALING;

MICROCRYSTALLINE SILICON;

EID: 34547597227     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.158     Document Type: Article

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