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Volumn 83, Issue 7, 2009, Pages 1023-1030
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A study of optical properties of hydrogenated microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition technique at different conditions of excited power and pressure
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Author keywords
a Si:H; Electrical conductivity; Infrared and Raman spectra; Optical properties; Plasma enhanced chemical vapor deposition
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Indexed keywords
ABSORPTION;
ELECTRIC CONDUCTIVITY;
ENERGY GAP;
FILM PREPARATION;
HYDROGENATION;
INFRARED SPECTROSCOPY;
LIGHT REFRACTION;
MICROCRYSTALLINE SILICON;
OPTICAL CONDUCTIVITY;
OPTICAL CORRELATION;
ORGANIC POLYMERS;
PLASMA DEPOSITION;
PLASMAS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
REFRACTIVE INDEX;
REFRACTOMETERS;
SOLIDS;
VAPOR DEPOSITION;
VAPORS;
A-SI:H;
ABSORPTION COEFFICIENTS;
CALCULATED VALUES;
CRYSTALLINE VOLUME FRACTIONS;
DEPOSITION CONDITIONS;
ELECTRICAL CONDUCTIVITY;
HYDROGENATED MICROCRYSTALLINE SILICONS;
INFRARED AND RAMAN SPECTRA;
OPTICAL BANDS;
OPTICAL ENERGY-GAPS;
OPTICAL PARAMETERS;
PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS;
RAMAN SPECTRUM;
THIN-FILM;
TRANSMISSION SPECTRUMS;
URBACH ENERGIES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
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EID: 61849170610
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.vacuum.2009.01.009 Document Type: Article |
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Times cited : (10)
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References (13)
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