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Volumn 107, Issue 2, 2010, Pages

Enhanced leakage current properties of Ni-doped Ba0.6Sr 0.4TiO3 thin films driven by modified band edge state

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS APPROACH; BAND EDGE STATE; BARIUM STRONTIUM TITANATE THIN FILMS; BST THIN FILMS; CHARGE-INJECTION MECHANISMS; COMPLEX DIELECTRIC CONSTANT; CONDUCTION BAND EDGE; ELECTRICAL PERFORMANCE; FERMI ENERGY LEVELS; IMAGINARY PARTS; IN-BAND; LOW TEMPERATURES; LOW-TEMPERATURE APPLICATIONS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; NI-DOPED; NI-DOPING; PEROVSKITE OXIDES; ROOM TEMPERATURE; SPECTRAL DEPENDENCES; SYNCHROTRON X RAYS; TIO; TRANSITION METAL DOPING;

EID: 75749134177     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3291124     Document Type: Article
Times cited : (12)

References (52)
  • 1
    • 0034739021 scopus 로고    scopus 로고
    • Alternative dielectrics to silicon dioxide for memory and logic devices
    • DOI 10.1038/35023243
    • A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) NATUAS 0028-0836 406, 1032 (2000). 10.1038/35023243 (Pubitemid 30690474)
    • (2000) Nature , vol.406 , Issue.6799 , pp. 1032-1038
    • Kingon, A.I.1    Maria, J.-P.2    Streiffer, S.K.3
  • 4
    • 0033731870 scopus 로고    scopus 로고
    • Ultra-thin oxide reliability for ULSI applications
    • DOI 10.1088/0268-1242/15/5/301
    • E. Y. Wu and J. H. Stathis, and L. K. Han, Semicond. Sci. Technol. SSTEET 0268-1242 15, 425 (2000). 10.1088/0268-1242/15/5/301 (Pubitemid 30863005)
    • (2000) Semiconductor Science and Technology , vol.15 , Issue.5 , pp. 425-435
    • Wu, E.Y.1    Stathis, J.H.2    Han, L.-K.3
  • 6
    • 0033525158 scopus 로고    scopus 로고
    • Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators
    • DOI 10.1126/science.283.5403.822
    • C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science SCIEAS 0036-8075 283, 822 (1999). 10.1126/science.283.5403. 822 (Pubitemid 29072316)
    • (1999) Science , vol.283 , Issue.5403 , pp. 822-824
    • Dimitrakopoulos, C.D.1    Purushothaman, S.2    Kymissis, J.3    Callegari, A.4    Shaw, J.M.5
  • 7
    • 0038362743 scopus 로고    scopus 로고
    • Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
    • DOI 10.1126/science.1083212
    • K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science SCIEAS 0036-8075 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
    • (2003) Science , vol.300 , Issue.5623 , pp. 1269-1272
    • Nomura, K.1    Ohta, H.2    Ueda, K.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 10
    • 13844267439 scopus 로고    scopus 로고
    • One volt organic transistor
    • DOI 10.1002/adma.200400809
    • L. A. Majewski, R. Schroeder, and M. Grell, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 17, 192 (2005). 10.1002/adma.200400809 (Pubitemid 40242472)
    • (2005) Advanced Materials , vol.17 , Issue.2 , pp. 192-196
    • Majewski, L.A.1    Schroeder, R.2    Grell, M.3
  • 13
    • 0036508039 scopus 로고    scopus 로고
    • IBMJAE 0018-8646
    • H. S. P. Wong, IBM J. Res. Dev. IBMJAE 0018-8646 46, 133 (2002).
    • (2002) IBM J. Res. Dev. , vol.46 , pp. 133
    • Wong, H.S.P.1
  • 15
    • 23644434257 scopus 로고    scopus 로고
    • 7-δ superlattices
    • DOI 10.1063/1.1995944, 042509
    • N. Heberkorn and J. Guimpel, Appl. Phys. Lett. APPLAB 0003-6951 87, 042509 (2005). 10.1063/1.1995944 (Pubitemid 41130170)
    • (2005) Applied Physics Letters , vol.87 , Issue.4 , pp. 1-3
    • Haberkorn, N.1    Guimpel, J.2
  • 16
    • 0003029410 scopus 로고
    • IFEREU 1058-4587,. 10.1080/10584589508012269
    • M. Sedlar and M. Sayer, Integr. Ferroelectr. IFEREU 1058-4587 10, 113 (1995). 10.1080/10584589508012269
    • (1995) Integr. Ferroelectr. , vol.10 , pp. 113
    • Sedlar, M.1    Sayer, M.2
  • 17
    • 0001506554 scopus 로고    scopus 로고
    • 3/MgO(001) thin films
    • DOI 10.1063/1.121469, PII S0003695198019226
    • D. Y. Noh, H. H. Lee, T. S. Kang, and J. H. Je, Appl. Phys. Lett. APPLAB 0003-6951 72, 2823 (1998). 10.1063/1.121469 (Pubitemid 128671610)
    • (1998) Applied Physics Letters , vol.72 , Issue.22 , pp. 2823-2825
    • Noh, D.Y.1    Lee, H.H.2    Kang, T.S.3    Je, J.H.4
  • 26
    • 0036732159 scopus 로고    scopus 로고
    • 3 thin films by Ni or Mn doping
    • DOI 10.1063/1.1495526
    • K. Ahn, S. Baik, and S. S. Kim, J. Appl. Phys. JAPIAU 0021-8979 92, 2651 (2002). 10.1063/1.1495526 (Pubitemid 35037873)
    • (2002) Journal of Applied Physics , vol.92 , Issue.5 , pp. 2651
    • Ahn, K.H.1    Baik, S.2    Kim, S.S.3
  • 29
    • 0031131059 scopus 로고    scopus 로고
    • THSFAP 0040-6090,. 10.1016/S0040-6090(96)09073-6
    • G. W. Dietz and R. Waser, Thin Solid Films THSFAP 0040-6090 299, 53 (1997). 10.1016/S0040-6090(96)09073-6
    • (1997) Thin Solid Films , vol.299 , pp. 53
    • Dietz, G.W.1    Waser, R.2
  • 30
    • 0001951339 scopus 로고    scopus 로고
    • FEROA8 0015-0193,. 10.1080/00150199908015766
    • J. F. Scott, Ferroelectrics FEROA8 0015-0193 232, 25 (1999). 10.1080/00150199908015766
    • (1999) Ferroelectrics , vol.232 , pp. 25
    • Scott, J.F.1
  • 31
    • 0001139619 scopus 로고    scopus 로고
    • JAPIAU 0021-8979,. 10.1063/1.368888
    • I. Stolichnov and A. K. Tagantsev, J. Appl. Phys. JAPIAU 0021-8979 84, 3216 (1998). 10.1063/1.368888
    • (1998) J. Appl. Phys. , vol.84 , pp. 3216
    • Stolichnov, I.1    Tagantsev, A.K.2
  • 33
    • 26344462977 scopus 로고
    • PRVAAH 0096-8250,. 10.1103/PhysRev.54.647
    • J. Frenkel, Phys. Rev. PRVAAH 0096-8250 54, 647 (1938). 10.1103/PhysRev.54.647
    • (1938) Phys. Rev. , vol.54 , pp. 647
    • Frenkel, J.1
  • 34
    • 29144456398 scopus 로고    scopus 로고
    • Physics of thin-film ferroelectric oxides
    • DOI 10.1103/RevModPhys.77.1083
    • M. Dawber, K. M. Rabe, and J. F. Scott, Rev. Mod. Phys. RMPHAT 0034-6861 77, 1083 (2005). 10.1103/RevModPhys.77.1083 (Pubitemid 43038903)
    • (2005) Reviews of Modern Physics , vol.77 , Issue.4 , pp. 1083-1130
    • Dawber, M.1    Rabe, K.M.2    Scott, J.F.3
  • 35
    • 84945482342 scopus 로고
    • JACTAW 0002-7820,. 10.1111/j.1151-2916.1991.tb07812.x
    • R. Waser, J. Am. Ceram. Soc. JACTAW 0002-7820 74, 1934 (1991). 10.1111/j.1151-2916.1991.tb07812.x
    • (1991) J. Am. Ceram. Soc. , vol.74 , pp. 1934
    • Waser, R.1
  • 36
    • 17144466178 scopus 로고    scopus 로고
    • THSFAP 0040-6090,. 10.1016/j.tsf.2003.12.037
    • T. Mori and D. E. Aspnes, Thin Solid Films THSFAP 0040-6090 455-456, 33 (2004). 10.1016/j.tsf.2003.12.037
    • (2004) Thin Solid Films , vol.455-456 , pp. 33
    • Mori, T.1    Aspnes, D.E.2
  • 38
    • 0026928061 scopus 로고
    • JAPLD8 0021-4922,. 10.1143/JJAP.31.2985
    • K. Abe and S. Komatsu, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 31, 2985 (1992). 10.1143/JJAP.31.2985
    • (1992) Jpn. J. Appl. Phys., Part 2 , vol.31 , pp. 2985
    • Abe, K.1    Komatsu, S.2
  • 43
    • 34248653767 scopus 로고    scopus 로고
    • Length scales for coherent π-bonding interactions in complex high-k oxide dielectrics and their interfaces
    • DOI 10.1016/j.mee.2007.04.069, PII S0167931707004194, INFOS 2007
    • H. Seo, G. Lucovsky, L. B. Fleming, M. D. Ulrich, J. Lüning, G. Koster, and T. H. Geballe, Microelectron. Eng. MIENEF 0167-9317 84, 2298 (2007). 10.1016/j.mee.2007.04.069 (Pubitemid 46776985)
    • (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2298-2301
    • Seo, H.1    Lucovsky, G.2    Fleming, L.B.3    Ulrich, M.D.4    Luning, J.5    Koster, G.6    Geballe, T.H.7
  • 46
    • 36149008808 scopus 로고
    • PRVAAH 0096-8250,. 10.1103/PhysRev.129.1550
    • H. R. Philipp and H. Ehrenreich, Phys. Rev. PRVAAH 0096-8250 129, 1550 (1963). 10.1103/PhysRev.129.1550
    • (1963) Phys. Rev. , vol.129 , pp. 1550
    • Philipp, H.R.1    Ehrenreich, H.2
  • 48
    • 0033701971 scopus 로고    scopus 로고
    • 3 (BST) thin films for Gigabit era DRAMs
    • DOI 10.1016/S0254-0584(00)00253-4
    • S. Ezhilvalavan and T. Y. Tseng, Mater. Chem. Phys. MCHPDR 0254-0584 65, 227 (2000). 10.1016/S0254-0584(00)00253-4 (Pubitemid 30869758)
    • (2000) Materials Chemistry and Physics , vol.65 , Issue.3 , pp. 227-248
    • Ezhilvalavan, S.1    Tseng, T.-Y.2
  • 49
    • 0034889496 scopus 로고    scopus 로고
    • Effects of donor and acceptor dopants on schottky barrier heights and vacancy concentrations in barium strontium titanate
    • DOI 10.1016/S0955-2219(01)00081-4, PII S0955221901000814
    • M. Dawber, J. F. Scott, and A. J. Hartmann, J. Eur. Ceram. Soc. JECSER 0955-2219 21, 1633 (2001). 10.1016/S0955-2219(01)00081-4 (Pubitemid 32763916)
    • (2001) Journal of the European Ceramic Society , vol.21 , Issue.10-11 , pp. 1633-1636
    • Dawber, M.1    Scott, J.F.2    Hartmann, A.J.3
  • 50
    • 0001574075 scopus 로고    scopus 로고
    • The electronic conduction mechanism in barium strontium titanate thin films
    • DOI 10.1063/1.122827, PII S0003695198006500
    • S. Zafar, R. E. Jones, B. Jiang, B. White, V. Kaushik, and S. Gillespie, Appl. Phys. Lett. APPLAB 0003-6951 73, 3533 (1998). 10.1063/1.122827 (Pubitemid 128677455)
    • (1998) Applied Physics Letters , vol.73 , Issue.24 , pp. 3533-3535
    • Zafar, S.1    Jones, R.E.2    Jiang, B.3    White, B.4    Kaushik, V.5    Gillespie, S.6
  • 51
    • 0032317716 scopus 로고    scopus 로고
    • FEREFH 1025-580X,. 10.1080/10584589808202046
    • J. F. Scott, Ferroelectr. Rev. FEREFH 1025-580X 21, 1 (1998). 10.1080/10584589808202046
    • (1998) Ferroelectr. Rev. , vol.21 , pp. 1
    • Scott, J.F.1


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