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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 PART A, 1998, Pages

Time-dependent leakage current of BaSrTiO3 film under high temperature bias stress

(3) Yamabe, Kikuo a Inomoto, Minoru a Imai, Keitaro b,c

a UNIVERSITY OF TSUKUBA (Japan)

b TOSHIBA CORPORATION (Japan)

c IBM (United States)

Author keywords

(Ba, Sr)TiO3; High temperature; High voltage; Leakage current; Oxygen deficit; Reliability; Thin film capacitor; Trap

Indexed keywords

BARIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; HOLE TRAPS; LEAKAGE CURRENTS; RELIABILITY; STRESSES; THIN FILM DEVICES;

BARIUM STRONTIUM TITANATE; HIGH TEMPERATURE BIAS STRESS; HIGH VOLTAGE; NEGATIVE GATE STRESS; OXYGEN DEFICIT;

CAPACITORS;

EID: 0032181413 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1162 Document Type: Article

Times cited : (9)

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