Variation of electrical conduction phenomena of Pt/(Ba, Sr)TiO3/Pt capacitors by different top electrode formation processes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 SUPPL. B, 1997, Pages 5860-5865

  Lee, Ki Hoon ^a   Hwang, Cheol Seong ^a   Lee, Byoung Taek ^a   Kim, Wan Don ^a   Horii, Hideki ^a   Kang, Chang Seok ^a   Cho, Hag Ju ^a   Lee, Sang In ^a   Lee, Moon Young ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

BST; Capacitor; Deposition power; Leakage current; Pt; PTCR effect

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ELECTRODES; GRAIN GROWTH; INTERFACES (MATERIALS); PLATINUM; THIN FILM DEVICES;

BARIUM STRONTIUM TITANATE; POSITIVE TEMPERATURE COEFFICIENT OF RESISTIVITY (PTCR) EFFECTS; SCHOTTKY EMISSION;

CERAMIC CAPACITORS;

EID: 0031222993     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5860     Document Type: Article

References (16)

1. Y. Yuuki, M. Yamamuka, T. Makita, T. Horikawa, T. Shibano, N. Hirano, H. Maeda, N. Mikami, K. Ono, H. Ogata and H. Abe: Proc. Int. Electron Devices Meet. (IEEE, New York, 1995) p. 115.
2. S. Yamamichi, P.-Y. Lesaicherre, H. Yamaguchi, K. Takemura, S. Sone, H. Yabuta, K. Sata, T. Tamura, K. Nakajima, S. Ohnishi, K. Tokashiki, Y. Hayashi, Y. Kata, Y. Miyasaka, M. Yoshida and H. Ono: Proc. Int. Electron Devices Meet. (IEEE, New York, 1995) p. 119.
3. Y. Nishioka, K. Shiozawa, T. Oishi, K. Kanamoto, Y. Tokuda, H. Sumitani, S. Aya, H. Yabe, K. Itoga, T. Hifumi, K. Marumoto, T. Kuroiwa, T. Kawahara, K. Nishikawa, T. Oomori, T. Fujino, S. Yamamoto, S. Uzawa, M. Kimata, M. Nunoshita and H. Abe: Proc. Int. Electron Devices Meet. (IEEE, New York, 1995) p. 903.
4. K. P. Lee, Y. S. Park, D. H. Ko, C. S. Hwang, C. J. Kang, K. Y. Lee, J. S. Kim, J. K. Park, B. H. Roh, J. Y. Lee, B. C. Kim, J. H. Lee, K. N. Kim, J. W. Park and J. G. Lee: Proc. Int. Electron Devices Meet. (IEEE, New York, 1995) p. 907.
5. Y. Ohno, T. Horikawa, H. Shinkawata, K. Kashihara, T. Kuroiwa, T. Okudaira, Y. Hashizume, K. Fukumoto, T. Eimori, T. Shibano, K. Arimoto, H. Itoh, T. Nishimura and H. Miyoshi: Proc. Symp. VLSI Technology, 1994, p. 149.
6. H. N. Al-Shareef, K. D. Gifford, S. H. Rou, P. D. Hren, O. Auciello and A. I. Kingon: Integr. Ferroelectr. 3 (1993) 321.
7. S. O. Park, C. S. Hwang, H-J. Cho, C. S. Kang, H-K. Kang, S. I. Lee and M. Y. Lee: Jpn. J. Appl. Phys. 35 (1996) 1548.
8. S. Y. Cha, H. C. Lee, W. J. Lee and H. G. Kim: Jpn. J. Appl. Phys. 34 (1995) 5220.
9. C. S. Hwang, B. T. Lee, S. O. Park, J. W. Kim, H.-J. Cho, C. S. Kang, H. Horii, S. I. Lee and M. Y. Lee: Integr. Ferroelectr. 13 (1996) 157.
10. C. S. Hwang and B. T. Lee: Kor. J. Ceram. 2 (1996) 95.
11. G. W. Dietz, W. Antphler, M. Klee and R. Waser: J. Appl. Phys. 78 (1995) 6113.
12. W. Heywang, Solid State Electron. 3 (1961) 51.
13. C. S. Hwang, B. T. Lee, J. W. Kim, K. H. Lee, H.-J. Cho, H. Horii, C. S. Kang, S. I. Lee, Y. B. Koh and M. Y. Lee: to be published in Appl. Phys. Lett.
14. J. F. Scott, M. Azuma, A. C. Paz de Araujo, L. D. McMillan, M. C. Scoot and T. Roberts: Integr. Ferroelectr. 4 (1994) 61.
15. T. Mihara and H. Watanabe: Jpn. J. Appl. Phys. 34 (1995) 5664.
16. S. Dey, J.-J. Lee and P. Alluri: Jpn. J. Appl. Phys. 34 (1995) 3142.